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| SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Small Package : ESC. CATHODE MARK KDR377E SCHOTTKY BARRIER TYPE DIODE Low Forward Voltage : VF(2)=0.43V (Typ.) C 1 E MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range pad dimension of 4 4mm. ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 40 40 150 30 200 150* 125 -55 125 UNIT V V mA mA mA mW 2 D F B A 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC * : Mounted on a glass epoxy circuit board of 20 20mm, Marking Type Name UV ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance SYMBOL VF(1) VF(2) IR CT IF=1mA IF=30mA VR=40V VR=1V, f=1MHz TEST CONDITION MIN. TYP. 0.29 0.43 6.0 MAX. 0.37 0.55 20 UNIT V A pF 2003. 6. 13 Revision No : 3 1/2 KDR377E IF 10 FORWARD CURRENT I F (uA) 10 10 10 10 10 1 0 0.2 6 - VF 10 REVERSE CURRENT I R (nA) 3 I R - VR Ta=25 C Ta=25 C 5 4 3 10 2 2 0.4 0.6 0.8 10 0 10 20 30 40 50 60 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) C T - VR TERMINAL CAPACITANCE C T (pF) 50 30 Ta=25 C f=1MHz 10 5 3 1 0 10 20 30 40 REVERSE VOLTAGE VR (V) 2003. 6. 13 Revision No : 3 2/2 |
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